Abstract
We report on electrical properties and the generation of the E4 defect in pulsed-laser deposited MgxZn1−xO thin films irradiated with 2.25 MeV protons. Whereas the electrical properties of the Schottky diodes as well as the net doping density of the samples did not change due to irradiation, the concentration of the E4 defect increased proportional to the applied dose as revealed by deep level transient spectroscopy. The generation rate η, is for binary ZnO thin films about 40 cm−1, a factor of 3 higher than in melt-grown single crystals, and increases to about 100 cm−1 for the Mg-alloyed thin films.
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