Abstract
The quantum yield of photocurrents in p-n Si photodiodes under pulsed laser illumination at 532 nm was measured as a function of light intensity which was varied over 6 orders of magnitude. Quantum yields decrease considerably at doses 10−6 to 10−5 J/pulse.cm2(= 8×l012 quanta/ pulse.cm2). This decrease as well as the photocurrent-time profile depend on the bias voltage. Possible applications for measuring pulsed laser dose are discussed.
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