Abstract
Capacitance spectroscopy was used to study the capacitive-voltage characteristics of multilayer structures with a Si-SiO2 transition layer in Al-SiO2-n-Si type samples fabricated by the thermal oxidation of a semiconductor. It is shown that the inhomogeneous distribution of the density of surface states is a localized electroactive center at the very semiconductor-dielectric interface, due to over-barrier charge emission or thermal ionization of impurity centers.
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