Abstract
The results of the second-photon-stimulated annealing of beryllium-implanted InAs layers are presented. The hole and electron concentrations and the activation energy of second-photon-stimulated annealing are calculated for the characteristic temperature regions using thermopower voltage values measured for the implanted layer. The possible mechanisms of the annealing of radiation-induced defects and the activation of beryllium atoms are discussed.
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Schedule a callMore From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
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