Abstract
Displacement of B, P, Sb and As atoms out of the crystal lattice sites of ion-implanted silicon by interstitial silicon atoms generated during annealing of interstitial complexes has been investigated. It has been revealed that the efficiency of the displacement is determined by the magnitude of the discrepancy between the covalent radii of the dopant atoms and silicon. A model of athermal movement of the interstitial Si atom in the field of elastic deformation of the crystal lattice caused by the dopant substitutional atoms has been proposed.
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