Abstract
Polariton-mode lasing in traps for the Bose condensation of dipolar excitons is considered and conditions under which this type of lasing takes place are examined. The width of the spectrum of the polariton modes involved in lasing and the role of the spatial and spectral inhomogeneity of the exciton distribution are discussed. The possibility of lasing in a system close to the exciton Bose condensation threshold is investigated in detail. The effect of inhomogeneous broadening of the exciton spectral line on the stability of steady-state lasing is analyzed. Experiments that help to reveal contributions from different physical processes to polariton-mode lasing in semiconductor structures designed for the Bose condensation of excitons are proposed.
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