Abstract
Methods are described for single crystal and film growth. The refractive index of crystals was found to be 2·16±0·08 and the fundamental optical absorption edge 5·9±0·2 eV. All crystals examined showed a weak absorption centred at 2·8 eV, which could be enhanced by the introduction of excess aluminium. The absorption edge of single crystals shifted to lower energies on heating in argon. Maximum photoconductivity occurred at 2·8 eV on illuminating the cathode. Thermal activation energies of 1·4 ± 0·1 eV and 0·5 ± 0·1 eV associated with electrical conductivity were observed. The log current-log voltage characteristics of crystals show an apparent Traps Filled Limit behaviour which is discussed in terms of a thin surface layer whose presence is indicated by experiments using current and potential probes. Thin films of A1N showed no apparent Traps Filled Limit behaviour.
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