Abstract
The technological conditions for growing single crystals of Tl1–x In1–x Sn x Se2 (x = 0.1–0.25) alloys are developed. The spectral distribution of the photoconductivity of the grown crystals at T = 300 K and thermally stimulated conductivity are studied. The effect of In3+cation substitution with Sn4+ in Tl1–x In1–x Sn x Se2 (x = 0.1–0.25) alloys on their photoelectric properties is shown.
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