Abstract

The possibility of fabrication (writing) of compact memory cells of a new type with ultrahigh density (10 11 bit/cm 2) is analyzed. It is suggested that nanometer-size zones with high concentration of donating ions or color centers will be produced in the surface regions of wide-gap ionic crystals using rigidly focused ion or electron beams. In contrast to inactivated surface areas, these zones possess the property of photoelectron emission under the effect of visible or near-UV radiation, and recording of electrons emitted with high spatial resolution (laser photoelectron microscopy) is the process of reading the contents of the memory cells. Single channel (scanning nanotips) and multichannel (laser resonance photoelectron microscopy) of ultrahigh density information is discussed.

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