Abstract
The mobilities of charge carriers in boron-doped diamond at low temperatures are estimated by numerically solving the Boltzmann equation for a steady-state nonequilibrium velocity distribution function of the carriers with allowance for their scattering by phonons. Estimates show that, at temperatures of up to 100 K, charge carriers with a negative mobility exist over a fairly broad (on the order of 100 K) range of their energies. In the steady-state case, the absolute mobility integrated over the distribution function turns out to be positive, but there are grounds to suppose that, in the case of an unsteady pulsed source of charge carriers, it may become negative.
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