Abstract

Population densities of excited states of argon atoms in a high power impulse magnetron sputtering (HiPIMS) discharge are examined using a global discharge model and a collisional-radiative model. Here, the ionization region model (IRM) and the Orsay Boltzmann equation for electrons coupled with ionization and excited states kinetics (OBELIX) model are combined to obtain the population densities of the excited levels of the argon atom in a HiPIMS discharge. The IRM is a global plasma chemistry model based on particle and energy conservation of HiPIMS discharges. OBELIX is a collisional-radiative model where the electron energy distribution is calculated self-consistently from an isotropic Boltzmann equation. The collisional model constitutes 65 individual and effective excited levels of the argon atom. We demonstrate that the reduced population density of high-lying excited argon states scales with (p*)−6, where p* is the effective quantum number, indicating the presence of a multistep ladder-like excitation scheme, also called an excitation saturation. The reason for this is the dominance of electron impact processes in the population and de-population of high-lying argon states in combination with a negligible electron–ion recombination.

Highlights

  • Magnetron sputtering1 is a highly successful physical vapor deposition technique that is indispensable to a wide range of industries

  • The ionization region model (IRM) and the Orsay Boltzmann equation for electrons coupled with ionization and excited states kinetics (OBELIX) model are combined to obtain the population densities of the excited levels of the argon atom in a high power impulse magnetron sputtering (HiPIMS) discharge

  • We demonstrated that there is a very good agreement between the bi-Maxwellian electron energy distribution assumed by the IRM and the energy distribution function (EEDF) that is calculated self-consistently using the OBELIX model

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Summary

Introduction

Magnetron sputtering is a highly successful physical vapor deposition technique that is indispensable to a wide range of industries. By applying high-power unipolar voltage pulses to the cathode target at low repetition frequency and low duty cycle, while keeping the average power at least two orders of magnitude lower than the pulse peak power, the momentary electron density can be increased. This approach is referred to as high-power impulse magnetron sputtering (HiPIMS).. HiPIMS belongs to the ionized physical vapor deposition (IPVD) techniques.. HiPIMS belongs to the ionized physical vapor deposition (IPVD) techniques. The HiPIMS technique has been demonstrated to deposit thin films with significantly enhanced material properties compared to films deposited with dc magnetron sputtering. At the same time, the high electron

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