Abstract
A photodiode, a semiconductor device, is designed to convert light into an electric current. The piezo-phototronic effect, arising from the interplay of semiconductor properties, piezoelectric polarizations, and photo-excitations, presents a promising avenue for enhancing photodiode performance. This research is dedicated to analyzing the impact of the piezo-phototronic effects on p-Si/n-ZnO heterojunction photodiodes when subjected to 365 nm illumination, a situation more intricate than the commonly studied 648 nm illumination. Employing numerical simulation methods, we systematically investigated the influence of varying ZnO and Si lengths on the piezo-phototronic effect, with a focus on the depletion region and neutral region current perspectives. Our findings reveal that adjusting these lengths can heighten sensitivity at low currents or lead to increased base currents. Additionally, the study delves into the effects of doping concentration, minority carrier lifetime, and mobility on device characteristics. This investigation contributes essential insights for a comprehensive understanding of piezo-phototronic effects and establishes a foundational framework for the design of industrial devices.
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