Abstract
A silicon closing switch with successive breakdown mode of diode structures based on a superfast ionization front is studied. In a coaxial line with a 48-Ω wave impedance, pulses with an amplitude above 100 kV and a rise time of 40 ps at an amplitude level of 0.3–0.9 are obtained. The maximum output-voltage rise rate is 2 MV/ns at a switching-current peak density of 60 kA/cm2. Numerical simulation shows that the switching time of individual structures of the device is 7–15 ps at a reverse-voltage rise rate of >100 kV/ns per structure under experimental conditions. The electric field in the p-n junction reaches the Zener breakdown threshold (∼106 V/cm) even in the case where the diode structure contains process-induced deep-level centers with concentrations of up to 1013 cm−3.
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