Abstract
A statistical theory has been proposed for the formation of a heterostructure of alternating metallic and semiconducting phases in a single-crystal VO2 film on a substrate. The size distribution function of metallic domains is found as a function of temperature. The temperature dependence of the intensity of light transmitted through the film I(T) is obtained. The depth and width of the dip in curve I(T) near a phase transition, calculated in the framework of the developed theory, agree with the experimental data.
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