Abstract
The main uptake of oxygen on cleaved(110) surfaces of GaAs at room temperature is known to proceed by two successive mechanisms, T 1 and T 2. In the present paper, they are attributed to activated adsorption and field-aided growth of the oxide film (Cabrera-Mott mechanism). This model explains the data from Auger electron spectroscopy and from soft X-ray photoemission spectroscopy. Since identical shapes of the uptake-versus-exposure curves are observed with (110) surfaces of GaAs, InAs and InP these two mechanisms are proposed to be effective with all III–V compound semiconductors. The photon stimulation of the oxygen uptake at these surfaces may also be understood on the basis of these two mechanisms. Furthermore, the model of activated adsorption also gives a plausible explanation for the observed increase of the threshold exposure for the main oxygen uptake on GaAs, InAs and InP (110) surfaces, in that order.
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