On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Abstract

With the help of transmission Kikuchi diffraction the major physical mechanism of antiferroelectric-like behavior as well as of the wake-up effect is determined by Maximilian Lederer, Konrad Seidel, and co-workers in article number 2100086. Furthermore, guidelines on how to influence this behavior by crystallographic texture and adjacent layers, as well as process conditions are identified. Finally, electric-field-induced crystallization is discovered as a new effect in hafnium oxide thin films.