Abstract
Two recent papers have dealt with the observation that the Schottky barrier height, Vb′, of the gold-gallium arsenide system increases linearly with the thickness of an interfacial oxide layer, l. In this paper it is shown how this linear relationship can be derived by considering the cause to be the same as that of the flat-band voltage shift in MOS devices. That is, charge trapped at the oxide-semiconductor interface creates an image charge in the semiconductor bulk. The slope, dVB′/dl, predicted by this analysis is in good agreement with the 1.75×10−6V/cm value experimentally derived. The predicted barrier height also varies linearly with the amount of trapped surface charge, Qss.
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