Abstract
Superconducting epitaxial YBa 2Cu 3O 7− δ (YBCO) films were grown by pulsed laser deposition on CeO 2-buffered sapphire (Al 2O 3) substrates. Scanning transmission electron microscopy and energy dispersive X-ray spectrometry investigations of the outgrowths found in YBCO films revealed these to be comprised of a multiphase microstructure, emanating from interfacial reactions of YBCO with the CeO 2 film and the Al 2O 3 substrate. The surface outgrowths are mostly composed of CuO and YCuO 2 phases which have segregated at the top of BaCeO 3, a product of the interfacial reaction of YBCO with CeO 2. Cross-sectional transmission electron microscopy observations further revealed a BaAl 2O 4 phase formed beneath the BaCeO 3 phase, including along the CeO 2–Al 2O 3 interface. Despite the presence of these outgrowths, high critical current density J c values >2.0 ×10 6 A/cm 2 were obtained.
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