Abstract
By simple computer simulations we show that localized exponential band tail states over a considerable range of energy and density can result from the long range electrostatic potential due to a relatively low concentration of randomly positioned charged defects. The exponent of the exponential decay depends upon the dielectric constant and the density of localized states but only marginally on the concentration of charge defects except near ΔV = 0. Imposition of a gaussian energy distribution reflecting the intrinsic diagonal disorder due to structural randomness does not alter the results except at energies very close to the band edges. Finally, the different widths of the valence and conduction band tails is shown to result from the different number of localized states near each edge.
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