Abstract
We compared the photoluminescence (PL) properties of AlInAsSb digital alloy samples with different periods grown on GaSb (001) substrates by molecular beam epitaxy. Temperature-dependent S-shape behavior is observed and explained using a thermally activated redistribution model within a Gaussian distribution of localized states. There are two different mechanisms for the origin of the PL intensity quenching for the AlInAsSb digital alloy. The high-temperature activation energy E 1 is positively correlated with the interface thickness, whereas the low-temperature activation energy E 2 is negatively correlated with the interface thickness. A quantitative high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) study shows that the interface quality improves as the interface thickness increases. Our results confirm that E 1 comes from carrier trapping at a state in the InSb interface layer, while E 2 originates from the exciton binding energy due to the roughness of the AlAs interface layer.
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