Abstract
This paper deals with the extensive characterization of dielectric films with thicknesses from 20 to 65 nm. Thick dielectric reliability has been investigated with time dependent dielectric breakdown (TDDB). TDDB tests are conducted under constant current injection. Assuming that the logarithm of the median time-to-failure is described by a linear electric field dependence, a generalized empirical law for the long-term reliability of the dielectric is proposed. This law takes into account the applied electric field and the dielectric thickness. This reliability law is available for dielectric thicknesses greater than 10 nm. A procedure to test dielectrics of various thicknesses is given in order to predict their reliability in power integrated devices.
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