Abstract
The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and reflection measurements. It was found that photoluminescence decay is strongly non-single exponential and can be described by the stretched exponential function. It was also shown that effective decay rate probability density function may be recovered by means of Stehfest algorithm. Moreover, it was proposed that the observed broadening of obtained decay rate distributions reflects the disorder in the samples.
Highlights
The discovery of visible photoluminescence (PL) from porous silicon and silicon nanocrystals (Si-NCs) has stimulated a great deal of interest in this material mainly due to a number of promising potential applications, like, for instance, light emitting diodes [1] or silicon-based lasers [2]
We study the absorption properties as well as PL decays measured for Si-NCs thin films deposited by the magnetron sputtering method
We have found that introduction of these impurities to Si-NCs environment leads to stronger deviation from singleexponential PL decays, which was interpreted as a result of appearance of new nonradiative sites
Summary
The discovery of visible photoluminescence (PL) from porous silicon and silicon nanocrystals (Si-NCs) has stimulated a great deal of interest in this material mainly due to a number of promising potential applications, like, for instance, light emitting diodes [1] or silicon-based lasers [2]. It should be emphasized that in the case of stretched exponential relaxation function, the PL decay may be analyzed more thoroughly by recovering the distribution of recombination rates [10]. Because NPh is directly proportional to the change of excited emitters number Δn = n(t’+δt) - n(t’), we may define the decay of PL intensity as a negative time derivative of the relaxation function: I PL
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