Abstract
In this paper, MOVPE grown SAS lasers with the inner stripe, a V-grooved channel, etched in either the [011] or the [011] direction are compared. The comparison is focussed on both the growth behaviour of GaAs and AlGaAs in the differently oriented channels during the second growth step and the laser characteristics of SAS lasers with different channel directions. The growth characteristics of GaAs and AlGaAs on the channelled wafer are determined by the nature of the side walls of the channel, i.e. (111)B and (111)A planes for the channels etched in the [011] and [011] direction, respectively. The growth results are explained by using a simple nucleation model. The laser characteristics measured at room temperature for MQW-SCH SAS lasers are found to be independent of the channel direction. However, a slight difference in the characteristics temperature T0 in the temperature range 30 to 60° C is observed. The laser structure with the channel etched in the [011] direction shows a lower T0 value.
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