Abstract
We consider the quality of a process, which can be characterized by a simple linear Berkson profile. One existing approach for monitoring the simple linear profile and two new proposed schemes are studied for charting the simple linear Berkson profile. Simulation studies demonstrate the effectiveness and efficiency of one of the proposed monitoring schemes. In addition, a systematic diagnostic approach is provided to spot the change point location of the process and to identify the parameter of change in the profile. Finally, an example from semiconductor manufacturing is used to illustrate the implementation of the proposed monitoring scheme and diagnostic approach. Copyright © 2012 John Wiley & Sons, Ltd.
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