Abstract
Abstract The variations of base and collector current with base-emitter voltage of polysilicon emitter transistors are studied. A model is suggested which incorporates transport through the monosilicon and polysilicon layers as well as tunnelling through the interfacial oxide layer. The voltage dependence of band bending Ψs and the probability of tunnelling P h are also considered in the model, which is capable of predicting the nonlinear I B−V BE characteristics, the variation of base current with polysilicon layer thickness, and the variation of current gain with temperature, as observed in practice. Results predicted by the model are in good agreement with published data.
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