Abstract
A new method to measure the mobility of K+ ions in SiO2 is proposed. The method is based on the TVS (triangular voltage sweep) technique at temperatures above 300 °C. The dependence of the voltage at which the current maximum occurs on the sweep rate provides the mobility at a particular temperature. Measurements at different temperatures show that the mobility of K+ ions in SiO2 can be described by μ (T) = (17.46/T) exp(−1.09/kT) cm2 V−1 s−1 in the temperature region 300–450 °C.
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