Abstract
A detailed study of the polarized Raman scattering of wurtzite GaN films is presented, focusing on the nature of the band centered at 740 cm −1 observed in the X( Z, Z) X configuration. The origin of this band is ascribed to the mixed contribution of the A 1 and E 1 longitudinal phonon modes coupled with the free carrier excitation. The spectral profile of the 740 cm −1 Raman band has been successfully reconstructed through a linear combination of the A 1–E 1 longitudinal phonon plasmon-coupled modes, leading to a free carrier concentration in good agreement with Hall effect measurements.
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