Abstract
Abstract A model for the first fire process and subsequent threshold switching action suggested by Thomas, Fray and Bosnell (1972), in both monostable and bistable glassy semiconducting diodes is further experimentally investigated in this communication. We have carried out electron microscope and magneto-resistance studies of monostable switches. The microscopy studies have shown that in a formed monostable device, even when the device is still operating satisfactorily, a filament of substantially different composition is precipitated from the matrix. These observations were performed on thin film switches prepared by r.f. sputtering from a Si12Ge10Te48As30 target. This filament has been isolated and shown to contain large single crystals of tellurium embedded in a glassy matrix. The major axes of these tellurium crystals were aligned parallel to the applied electric field. Magnetoresistance studies, in fields up to 180 kG, in the on-state of a monostable switch showed that the resistivity is inversely proportional to the square of the magnetic field. We also describe qualitative data on the effect of uni-axial stress on the threshold voltage of monostable devices and the use of a liquid crystal decoration technique to locate the current flow in both monostable and bistable devices. The applicability of these results to the model of the switching action in both types of device is discussed.
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