Abstract
During the low-temperature oxidation of a metal whose oxide is a cation conductor, it is assumed that metal atoms enter the oxide only at lattice steps on the metal surface and that new oxide forms only at the oxide-atmosphere interface. It is shown that if these assumptions are valid there should be almost no stress in oxide films in which cation conduction predominates, that the Pilling-Bedworth rule has no validity for such oxide films, and that no vacancies or voids should be produced in the underlying metal. Some observations of anisotropy of oxidation rate on different crystal faces are discussed. For oxides in which anion conduction predominates it is concluded that there may also be no stress in the film and that the Pilling-Bedworth rule may not apply.
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