Abstract
The mechanism of ion desorption in the process of laser desorption/ionization from silicon surfaces is studied using pyridine and N,N-dimethyl-1-phenylethylamine as examples. Based on the experimental and theoretical results, dependences of ion signal on the surface temperature are obtained for two different wavelengths of laser radiation, 355 nm and 532 nm. The theoretical part of the work includes numerical calculations of surface temperatures of amorphous silicon using the SLIM software package and quantum-chemical calculations of binding energy between the ions and silicon surface using the Hartree-Fock method and Firefly software package. It is demonstrated that the ions are desorbed via a thermal mechanism at temperatures much lower than the melting point of amorphous silicon.
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