Abstract
In this paper are presented some experimental results to explain mechanisms involved in the growth of by organometallic vapor‐phase epitaxy (OMVPE). A pyrolysis study of dimethylcadmium (DMCd) was conducted in an OMVPE reactor, in the temperature range 230°–400°C. It was found that dimethylcadmium decomposes above approximately 230°C and the reaction is heterogeneous from 230° to 370°C. growth was also studied over a range of temperature from 300° to 375°C and for various reactor parameters. In all cases, the deposition rate was found to be closely related to the decomposition of dimethylcadmium. A model is presented to explain the growth at low temperatures where diethyltelluride is very stable. The growth of , using diethyltelluride and elemental cadmium, was demonstrated and supports our model. The growth rate of was studied as a function of the partial pressure of DMCd and DETe, and the results were explained in light of this growth model.
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