Abstract
A suggestion to experimentally measure the electron tunnelling time by observing the tunnelling current cut-off as a function of the magnetic field intensity in semiconductor pn tunnel junctions, when they are placed in a crossed electric and magnetic field configuration, has been made in this paper. A simple and a rigorous quantum mechanical analysis to justify the above proposition have been presented. An order of agreement between the tunnelling time values derived from the published experimental data and our theoretical prediction has been noticed.
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