On the low temperature limits for cryogenic etching: A quasi in situ XPS study

Abstract

The cryogenic plasma etching of silicon for nano- and microelectromechanical devices is known to show an optimal operating temperature around –100 °C. The physicochemical mechanisms occurring beyond this limit, however, are not often discussed. Thus, to explore the adsorption of residual gases on the uppermost surface of a Si/SiO2 wafer at –100 ≤T≤ –147 °C, we performed a comprehensive, quasi in situ X-ray photoelectron spectroscopy (XPS) study. Precisely, the cooling down of the sample was performed in a typical plasma-etching reactor at a residual pressure of 10−4 Pa, being afterwards transferred to the XPS chamber at a constant temperature, under high vacuum. We report that water build-up on the surface becomes a major issue for T< –120 °C, as detected in the O 1 s spectra and modelled by QUASES-Generate. The thickness of the H2O layer increases exponentially as the surface temperature decreases, following an anti-Arrhenius behavior. At –147 °C, the overlayer thickness is estimated to ∼125 Å, thus, the silicon is barely probed by XPS. Adsorbed fluorine can also be detected at low temperatures, although less markedly. Finally, the effect of the temperature-dependent Fermi level change on the Si 2p peak binding energy is discussed.