Abstract
In this brief, we take a close look at the log-linear inversion-charge relation adopted in several charge-based compact models for MOSFETs. It is shown that the log-linear relation lacks flexibility in fitting the subthreshold characteristics independent of the above threshold behavior. The shortcomings are born out in specific examples comparing the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${Q}_{\text {i}}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {gs}}$ </tex-math></inline-formula> curves of the log-linear inversion-charge relation to those of the charge-sheet model and the analytic potential model for double-gate (DG) MOSFETs.
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