Abstract
In this paper influence of single broadening mechanisms on intraband absorption line profile in quantum wells id analysed. The expression for the line profile arising only from the combined influence of the effective-mass-mismatch and the material nonparabolicity is derived, the later beng responsible for an increase of the total linewidth by a factor of (2÷3). The full line profile in GaAs-Al xGa 1−xAs system is shown to be asymmetric and red-shifted, due to the above effects. Numerical results, given for a GaAs well in Al 0.4Ga 0.6As bulk indicate that there are regions of structure parameters where some of broadening mechanisms play a dominant role.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
