Abstract
The results of studies of the point-defect generation kinetics in the Si-SiO2 system by means of Electron Spin Resonance (ESR) and InfraRed (IR) absorption spectroscopy are presented. The influence of oxidation conditions (oxidation temperature and time, cooling rate) on the defect structure of the Si-SiO2 interface has been studied. It is shown that this influence can be explained by the model of point-defect generation proposed by Tan and Gosele, and the structural properties of the Si-SiO2 system can be improved by an appropriate choice of the oxidation conditions.
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