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Abstract
The ionization loss spectra of high-energy negatively charged particles which move in the planar channeling mode in a silicon crystal are studied with the use of numerical simulation. The case when the crystal thickness is on the order of the dechanneling length l_d is considered. It is shown that in this case the shape of the spectrum noticeably depends on l_d. The evolution of various characteristic parameters of the spectrum with the change of l_d is investigated. A method of the experimental determination of l_d on the basis of the measurement of the ionization loss spectrum is proposed.
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