On the intrinsic optical bistability of a single Kerr nonlinear dielectric layer

Abstract

In this study, we investigate the optical bistability and multistability in a pure single Kerr nonlinear layer of dielectric material using the Maxwell-Duffing approach. We employ the Duffing anharmonic oscillator as an alternative constitutive relation to express the electric field as a nonlinear function of the induced polarization. Utilizing both the electromagnetic wave equation and the Duffing constitutive relation, we obtain a nonlinear polarization equation propagates through the nonlinear layer under the slowly varying envelope approximation. With the application of boundary conditions at both interfaces, expressions for the incident, reflected, and transmitted intensities of the light wave are obtained as nonlinear functions of the polarization and other controlling parameters. For realistic input parameters, our numerical results demonstrated the existence of an intrinsic optical bistability (IOB) in a pure single dielectric layer. Furthermore, the threshold value of the observed IOB depends essentially on the value Eth, i.e., the minimum value required to invoke the third-order nonlinearity inside the material. For operating frequency near the sharp resonance region, Eth was found to be ≈105 V/cm; this is equivalent to a threshold value of the optical intensity ≈1010 W/cm2. With the developments in THz sources, it is nowadays possible to observe this IOB experimentally by tuning the operating frequency near the sharp resonance region of the material. Steps to get the threshold value of Eth are also advised.