On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction

Abstract

This paper reports a parameter extraction method based on a new model for the high frequency capacitance–voltage ( C( V)) characteristics of 6H-SiC boron compensated junctions. The C( V) model confirms the presence of two type regions (p − and n −) in the quasi-intrinsic layer induced by boron compensation. The extracted values of the net doping of these zones (6–10×10 12 cm −3) are in good agreement with previously reported data. In contrast, the thickness of the quasi-intrinsic layer, which is about twice the epilayer’s width, proves the expansion of the quasi-intrinsic region in the substrate.