On the internal current gain of buried N-body silicon-on-insulator N-metal-oxide-semiconductor field-effect-transistors

Abstract

We give a simplified expression of the internal current gain of buried N-body silicon-on-insulator N-metal-oxide-semiconductor field-effect-transistors. It applies only for the subthreshold region of operation, which is required for the bipolar action. The existence of a body effect is emphasized and explains the change of the current gain versus the body doping and the silicon film thickness. For a more accurate estimate of the current gain, it would be required to account for space charge hole recombination and high injection effect.