Abstract
Rapid nonthermal melting can occur under the action of a supershort laser pulse in semiconductors. An attractive method for quantitatively describing the kinetics of such effects can be molecular-dynamic modelling, in which the interatomic potential depends on the parameters of the excited carriers. This paper discusses the properties that such a potential must possess. Based on a simple model for photoexcited carriers, it is shown that the condition of conservation of energy imposes definite requirements on the potential.
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