Abstract
The present work attempts to provide a different approach to understand the distribution of injected charge in Si-rich SiN films that find application in MEMS capacitive switches. The study employs Thermally-Stimulated-Depolarization-Current measurements to calculate the collected charge dependence on film thickness and show that the injected charge distribution is different from simulated ones. Moreover, employing Kelvin Probe surface potential decay measurements calculates the discharge current towards the film surfaces and bulk as well as their dependence on material stoichiometry.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
