Abstract
The regrowth kinetics of As + -implanted, -amorphous silicon has been studied by varying annealing temperature, implantation energy, implantation dose, and crystal orientation of the silicon substrate. In particular, the regrowth kinetics during the initial annealing regime has been investigated. This first annealing stage, which lasts only for about 5 minutes, has been found for all chosen annealing temperatures. The regrowth rates, that is, the velocity of the crystalline/amorphous interface, varies from 0.5 nm/min for 200 o C anneals up to 10 nm/min for heat treatments at 550 o C
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