Abstract
Using the electron beam induced current (EBIC) signal of a scanning electron microscope the electrical activity of microdefects in dislocation free silicon is investigated. The use of Schottky diodes as detectors allows to test the influence of heat treatment processes. Only annealed samples show remarkable effects. The main activity of decorated microdefects is found to be a reduction of the diffusion length of minority carriers. An versetzungsfreiem Silizium wird mit einem Rasterelektronenmikroskop mit der Methode des Elektronenstrahl-induzierten Stromes die elektrische Wirkung von Mikroinhomogenitaten untersucht. Die Verwendung von Schottky-Dioden gestattet es, den Einflus von Warmebehandlungen zu untersuchen. Nur getemperte Proben ergeben wesentliche Effekte. Es wird gezeigt, das dekorierte Mikrodefekte die Diffusionslange der Minoritatsladungstrager herabsetzen.
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