Abstract
The electrical activity of MeV particle irradiation induced lattice defects in silicon, is studied through their impact on diode characteristics and on minority carrier lifetime. For the first time results are presented on low-frequency noise spectroscopy for radiation damage and substrate characterisation. The results show that diodes on Cz substrates are more radiation hard than on epi- and FZ substrates but have a poorer quality before irradiation with respect to noise, minority carrier lifetime and I/V characteristics.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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