Abstract
The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In0.74Ga0.26As quantum wells and δ-doped In0.53Al0.20Ga0.27As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that p-type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 1012 cm–2 results in the suppression of nonradiative recombination.
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