Abstract
A radiation defect responsible for the 0.52 eV absorption band in the IR absorption spectrum of irradiated Ge is investigated. n-type samples cut in three main crystallographic directions 〈111〉, 〈110〉, and 〈100〉 are irradiated by 3 to 5 MeV electrons at T ≈ 77 K. During the measurements monochromatic polarized light and uniaxial stress are used. It is shown that the radiation defect studied hae the property of dichroism. Besides, depending on the direction of applied uniaxial stress, variations in the value of the 0.52 eV absorption band are revealed. The space orientation of the radiation defect giving rise to the 0.52 eV absorption band is determined. Based on the analysis of the data obtained as well as on the analogy with silicon, it is assumed that the defect is a divacancy whose axis is oriented close to the 〈110〉 crystallographic directions. [Russian Text Ignored].
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