On the Growth of Native Oxides on Hydrogen-Terminated Silicon Surfaces in Dark and Under Illumination with Light

Abstract

We investigated the thickness evolution of silicon dioxide grown on a silicon surface terminated by H-Si groups, at room temperature and an elevated temperature of 250{degree sign}C. At room temperature, we observed a noticeable difference in the oxidation rate between light-illuminated samples and the samples kept in the dark. No measurable difference between the oxidation of p-type Si and n-type Si was observed. To describe the low-temperature oxidation, we made further steps towards the extension of our oxidation model earlier developed for thin oxides grown in the temperature range 750-950{degree sign}C.