Abstract
The growth of PdGe and Pd 2Ge compounds was investigated by analyzing, after annealing, samples with about 1000–3000 Å thick evaporated Pd, using either bulk (single-crystal) Ge or amorphous (evaporated) Ge as substrate. The growth rate is different in both cases. The grain sizes of each compound, as determined by X-ray diffraction line-broadening, are the same for both Ge substrates. Therefore the hypothesis of formation processes controlled by grain boundary diffusion seems invalid. A different mechanism is suggested.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
