Abstract

Carbon nanotubes (CNTs) were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. The results show that the growth of CNTs is strongly influenced by the substrate used. Vertically aligned multi-walled CNTs were found on quartz, Fe-deposited silicon and quartz, untreated silicon, and on silicon nitride-deposited silicon substrates. On the other hand, spaghetti-type growth was observed on stainless steel mesh, and no CNT growth was observed on HF-treated silicon and copper. Silicon nitride-deposited silicon substrate proved to be a promising substrate for long vertically aligned CNTs of length 110–130 μm. We present a possible growth mechanism for vertically aligned and spaghetti-type growth of CNTs based on these results.

Highlights

  • Over the last several years, a large number of experiments have been carried out to study the growth and structure of carbon nanotubes (CNTs) and to correlate the results with theoretical predictions [1,2,3]

  • We present a comparative study on the growth and morphology of Carbon nanotubes (CNTs) synthesized by thermal chemical vapor deposition on various substrates commonly used in various applications

  • The following substrates were used for the growth of CNTs in the present study : (1) untreated silicon, quartz, silicon oxide, copper, and stainless steel, (2) n-type silicon and quartz with an iron film of *20 nm thickness deposited on them by thermal evaporation (3) n-type silicon wafer with a Nanoscale Res Lett (2010) 5:1211–1216

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Summary

Introduction

Over the last several years, a large number of experiments have been carried out to study the growth and structure of carbon nanotubes (CNTs) and to correlate the results with theoretical predictions [1,2,3]. The following substrates were used for the growth of CNTs in the present study : (1) untreated silicon, quartz, silicon oxide, copper, and stainless steel, (2) n-type silicon and quartz with an iron film of *20 nm thickness deposited on them by thermal evaporation (3) n-type silicon wafer with a Nanoscale Res Lett (2010) 5:1211–1216

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